Time: 12:50 – 13:30 and 15: 10 -15: 40

Transistor Stacking and Future Packaging Technologies
No.	Name	Title
1	Yu-Chun Chen	Large-Area Single-Crystalline Silicon/Germanium Film Using Laser Crystallization for Monolithic 3DICs Platform
2	Ying-Qi Liu	Strain Evolution in SiGe Nanosheet Transistor Process Flow
3	Chu-Hsiu Hsu	Monolithic Hybrid-3D Standard Cell Library with Sandwiched Inter-Metal Layer for 3D Digital Computation-in-Memory Circuits
4	Huai-En Lin	Inspection, Design, and Improvement of Hybrid Bonding in 3D IC Fabrication Using In-situ Heating Atomic Force Microscopy
5	Hua-Jing Huang	Atomic-Scale Investigation of Electromigration Behavior in Cu-to-Cu Joints at High Current Density
6	Hsuan-Hsiao Liu	Elimanated Nanotwinned Copper Bonding Interfaces Through Epoxy-Induced Fine Grains on Copper Surface
7	Chi-Ting Huang	Electrical Conductivity of Nanotwinned Copper Joints: A First-Principles and Boltzmann Transport Study
8	Ping-Chun Kuo	High strength and highly (111)-oriented nanotwinned Ag thin films on SiC substrate
Oxide Semiconductor Devices and Applications
No.	Name	Title
9	Wei-Kai Yu	IGZO-Based 2T-DRAM with Positive Threshold Voltage and Long Retention
10	Tsung-Che Chiang	High Performance P-type Tin monoxide Thin Film Transistor for Back-end of Line Applications
11	Yu-Cheng Chang	Breaking the trade-off between mobility and on-off ratio in oxide thin-film transistors
12	Xin-Ren Yu	Investigation of High-Performance Germaniunm-on-Insulator (GeOI) GAAFETs Fabricated through Wafer Bonding
13	Yun-Hao Yeh	Cryogenic Measurement on the Electrical Properties of Sputter-deposited Indium Gallium Zinc Oxide Thin-film transistors
14	Liang-Zi Yao	Implementation of Density Functional Theory (DFT) and Artificial Intelligence (AI) in Indium Tin Oxide (ITO)
2D/1D Semiconductor Devices: Experiment
No.	Name	Title
15	Sen-Hao Chang	Interface Property of Metals and Semimetals Contact Transition Metal Dichalcogenides
16	Bo-Wei Chen	Interfacial nanobubbles induce doping behavior of SL-MoS2 on Au(111)
17	Yen-Yu Lai	WSe2 defect engineering by Ne ion bombardment and growth of semimetal Sn
18	Ting-Yu Pan	Exploring effects of stress and strain on electron transport and field-effect performance of few-layer MoS2
19	Shin-Lin Tsai	Realization of low contact resistance on MoS2 field-effect transistors using low melting point metals and semimetals
20	Jia-Hao Chih	Optimizing WSe2 Double Gate FETs with Low-Temperature PE-AlN/TH-HfO2 Gate Dielectrics and Post-Annealing Treatment
21	Shin-Yuan Wang	Conformal bilayer h-AlN epitaxy on WS2 as an interfacial layer with ultralow leakage current
22	Hui-Ting Liu	Growth Behavior of Ni on Hydrogen-Crack WS2 Surface
23	Yu-Che Huang	Long range van der Waal epitaxy of Au / MoS2 moiré superlattices at room temperature
24	Qian-Yo Lee	Synthesis and Doping of 2D Semiconductors by MOCVD
2D/1D Semiconductor Devices: Simulation
No.	Name	Title
25	Shao-Chen Hwu	Anisotropic Transition-Metal Nitride van der Waals Epitaxy on Two-Dimensional Matrials: A First-Principles Study
26	Zi-Che Yang	Interface-doping Effects and Gate-length Dependence of TMD/Metal Contacts
27	Ken-Ming Lin	Efficiency of Gate Control in Short-Channel Pt-WSe2-Pt Nanojunctions: A First Principles Study
28	Sylvia Qingyu Cai	Electron Transport through InSe/Metal Heterostructures
29	Tsung-Mu Wu	First-principles calculation of interfacial characteristics between contact metal and two-dimensional materials
Ferroelectric Materials and Devices
No.	Name	Title
30	Jie-Ni Dai	Design Space Exploration for Interfacial-Layer-Free Negative-Capacitance FET
31	Cheng-Yu Yu	Comparative Analysis of Ferroelectric Properties and Reliability in MFM Capacitors with Varied HZO Layer Thicknesses
32	Ming-Lun Tsai	Seed-layer Effects on the Ferroelectric Properties of Hf1-xZrxO2 Thin Films
33	Yu-Tsung Liao	Engineering HZO by Flat Amorphous TiN Achieving Uniform c-axis Alignment, High Breakdown Field, and Endurance > 4E12
34	Li-Cheng Teng	Demonstration of BEOL-Compatible Ferroelectric 6.5 nm HZO Capacitor with High Endurance and Retention
III-V Semiconductor Devices and Novel Materials Applications
No.	Name	Title
35	Mu-Yu Chen	Improving NDR and RF Characteristics of InGaAs MOSFETs through Ferroelectric Thickness Tuning for Enhanced Energy Efficiency
36	Howie Tseng	Study of Low Noise and High Linearity AlGaN/GaN HEMT with Ti/Al/Ti/W Au-free Ohmic Contact
37	Chun-Yi Hsia	Reliability Study of Ir-Sputtered GaN Power Amplifier MMIC Under High Level RF Input Drive at Elevated Temperatues
38	Jing-Yuan Tsai	Electric-Field Induced Structural Transition in HighPerformance High Entropy Oxide-Based Memristor
39	Yu-Hao Wu	Visualization of Eu2+/Eu3+ coactivated BaAl2O4 phosphor using X-ray nanoprobe beamline at TPS 23A
40	Shuo-Ting Hsu	Distribution of TiC Nanoceramic Particles and Microstructural Properties of 7075 Aluminum Alloy
41	Kris K.H. Lin	Achieving Low Contact Resistance in MoS2 nFET with van der Waals epi Au