GaN transistors and MMICs for microwave applications have now matured to high TRL levels, and their implementation in mission critical systems is a realistic scenario. For practically all space borne applications decentralized microwave power sources are of great interest as an enabler of lightweight and electronically controlled beam-steering systems powered by a multitude of active antenna pixels arranged in planar or even 3-dimensional apertures. This new technology drastically reduces satellite payload and may even enable emerging and future miniature satellite systems that require high data rate communication and antenna beam steering to address ground stations to form Low Earth Orbits (LEO) and constellations of satellites. Beam steering antenna concepts require a matrix of individual solid-state power amplifiers. Beam steering solutions of the past often consist of powerful but efficient RF power sources combined with power dividers and phase shifters to obtain steering.
Owing to the use of Travelling Wave Tubes (TWTs) such systems can reach high efficiency levels but are extremely bulky and heavy. Active steering antenna consisting of individual solid-state amplifiers are much smaller in volume and weigh considerably less, and therefore are very attractive for space applications. On the other hand, the lower weight, volume and higher flexibility of solid-state active beam steering antennas must be balanced against efficiency and power consumption of the entire satellite system. The integration with Si-based technology which can contribute to building robust and high cost-efficient GaN MMICs is also of great importance. Additionally, space-related reliability needs to be considered for the technology’s realization.
- Novel Concepts for Material Epitaxy on Si Substrates
- Integration with reliability analysis of Power and RF GaN Devices with Si for 5G/6G system and Satellite Handset Applications
These two different centers of competence will bring together core expertise to develop specific process modules which will finally render the already existing Ka-band GaN process at NYCU into a MMIC process line capable for realizing highly performing space related Ka-band devices.
