{"id":328,"date":"2024-08-14T00:03:40","date_gmt":"2024-08-13T16:03:40","guid":{"rendered":"https:\/\/fsrc.nycu.edu.tw\/Conference\/?page_id=328"},"modified":"2024-08-24T22:33:44","modified_gmt":"2024-08-24T14:33:44","slug":"poster","status":"publish","type":"page","link":"https:\/\/fsrc.nycu.edu.tw\/Conference\/index.php\/poster\/","title":{"rendered":"Poster Session"},"content":{"rendered":"\n

Time: 12:50 – 13:30 and 15: 10 -15: 40<\/p>\n\n\n\n

Transistor Stacking and Future Packaging Technologies<\/font><\/strong><\/td><\/tr>
No.<\/td>Name<\/td>Title<\/td> <\/td><\/tr>
1<\/td>Yu-Chun Chen<\/td>Large-Area Single-Crystalline Silicon\/Germanium Film Using Laser Crystallization for Monolithic 3DICs Platform<\/td><\/a><\/td><\/tr>
\n2\n<\/td>Ying-Qi Liu<\/td>Strain Evolution in SiGe Nanosheet Transistor Process Flow<\/td><\/a><\/td><\/tr>
\n3\n<\/td>\nChu-Hsiu Hsu\n<\/td>Monolithic Hybrid-3D Standard Cell Library with Sandwiched Inter-Metal Layer for 3D Digital Computation-in-Memory Circuits<\/td><\/a><\/td><\/tr>
\n4\n<\/td>\nHuai-En Lin\n<\/td>Inspection, Design, and Improvement of Hybrid Bonding in 3D IC Fabrication Using In-situ Heating Atomic Force Microscopy<\/td><\/a><\/td><\/tr>
\n5\n<\/td>Hua-Jing Huang<\/td>Atomic-Scale Investigation of Electromigration Behavior in Cu-to-Cu Joints at High Current Density<\/td><\/a><\/td><\/tr>
\n6\n<\/td>Hsuan-Hsiao Liu<\/td>Elimanated Nanotwinned Copper Bonding Interfaces Through Epoxy-Induced Fine Grains on Copper Surface<\/td><\/a><\/td><\/tr>
\n7\n<\/td>Chi-Ting Huang<\/td>Electrical Conductivity of Nanotwinned Copper Joints: A First-Principles and Boltzmann Transport Study<\/td><\/a><\/td><\/tr>
\n8\n<\/td>Ping-Chun Kuo<\/td>High strength and highly (111)-oriented nanotwinned Ag thin films on SiC substrate<\/td><\/a><\/td><\/tr>
Oxide Semiconductor Devices and Applications<\/font><\/strong><\/strong><\/td><\/tr>
\nNo.\n<\/td>\nName\n<\/td>\nTitle\n<\/td> <\/td><\/tr>
\n9\n<\/td>\nWei-Kai Yu\n<\/td>\nIGZO-Based 2T-DRAM with Positive Threshold Voltage and Long Retention\n<\/td><\/a><\/td><\/tr>
\n10\n<\/td>\nTsung-Che Chiang\n<\/td>\nHigh Performance P-type Tin monoxide Thin Film Transistor for Back-end of Line Applications\n<\/td><\/a><\/td><\/tr>
\n11\n<\/td>\nYu-Cheng Chang\n<\/td>\nBreaking the trade-off between mobility and on-off ratio in oxide thin-film transistors\n<\/td><\/a><\/td><\/tr>
\n12\n<\/td>\nXin-Ren Yu\n<\/td>\nInvestigation of High-Performance Germaniunm-on-Insulator (GeOI) GAAFETs Fabricated through Wafer Bonding\n<\/td><\/a><\/td><\/tr>
\n13\n<\/td>\nYun-Hao Yeh\n<\/td>\nCryogenic Measurement on the Electrical Properties of Sputter-deposited Indium Gallium Zinc Oxide Thin-film transistors\n<\/td><\/a><\/td><\/tr>
\n14\n<\/td>\nLiang-Zi Yao\n<\/td>\nImplementation of Density Functional Theory (DFT) and Artificial Intelligence (AI) in Indium Tin Oxide (ITO)\n<\/td><\/a><\/td><\/tr>
2D\/1D Semiconductor Devices: Experiment <\/font><\/strong><\/strong><\/td><\/tr>
\nNo.\n<\/td>\nName\n<\/td>\nTitle\n<\/td> <\/td><\/tr>
\n15\n<\/td>\nSen-Hao Chang\n<\/td>Interface Property of Metals and Semimetals Contact Transition Metal Dichalcogenides<\/td><\/a><\/td><\/tr>
\n16\n<\/td>\nBo-Wei Chen\n<\/td>Interfacial nanobubbles induce doping behavior of SL-MoS2<\/sub> on Au(111) <\/td><\/a><\/td><\/tr>
\n17\n<\/td>\nYen-Yu Lai\n<\/td>WSe2<\/sub> defect engineering by Ne ion bombardment and growth of semimetal Sn <\/td><\/a><\/td><\/tr>
\n18\n<\/td>\nTing-Yu Pan\n<\/td>Exploring effects of stress and strain on electron transport and field-effect performance of few-layer MoS2<\/sub> <\/td><\/a><\/td><\/tr>
\n19\n<\/td>\nShin-Lin Tsai\n<\/td>Realization of low contact resistance on MoS2<\/sub> field-effect transistors using low melting point metals and semimetals <\/td><\/a><\/td><\/tr>
\n20\n<\/td>\nJia-Hao Chih\n<\/td>Optimizing WSe2<\/sub> Double Gate FETs with Low-Temperature PE-AlN\/TH-HfO2<\/sub> Gate Dielectrics and Post-Annealing Treatment <\/td><\/a><\/td><\/tr>
\n21\n<\/td>\nShin-Yuan Wang\n<\/td>Conformal bilayer h-AlN epitaxy on WS2<\/sub> as an interfacial layer with ultralow leakage current <\/td><\/a><\/td><\/tr>
\n22\n<\/td>\nHui-Ting Liu\n<\/td>Growth Behavior of Ni on Hydrogen-Crack WS2<\/sub> Surface <\/td><\/a><\/td><\/tr>
\n23\n<\/td>\nYu-Che Huang\n<\/td>Long range van der Waal epitaxy of Au \/ MoS2<\/sub> moir\u00e9 superlattices at room temperature <\/td><\/a><\/td><\/tr>
\n24\n<\/td>Qian-Yo Lee<\/td>\nSynthesis and Doping of 2D Semiconductors by MOCVD\n<\/td><\/a><\/td><\/tr>
2D\/1D Semiconductor Devices: Simulation <\/font><\/strong><\/strong><\/td><\/tr>
\nNo.\n<\/td>\nName\n<\/td>\nTitle\n<\/td> <\/td><\/tr>
\n25\n<\/td>\nShao-Chen Hwu\n<\/td>\nAnisotropic Transition-Metal Nitride van der Waals Epitaxy on Two-Dimensional Matrials: A First-Principles Study\n<\/td><\/a><\/td><\/tr>
\n26\n<\/td>\nZi-Che Yang\n<\/td>\nInterface-doping Effects and Gate-length Dependence of TMD\/Metal Contacts\n<\/td><\/a><\/td><\/tr>
\n27\n<\/td>\nKen-Ming Lin\n<\/td>Efficiency of Gate Control in Short-Channel Pt-WSe2<\/sub>-Pt Nanojunctions: A First Principles Study <\/td><\/a><\/td><\/tr>
\n28\n<\/td>\nSylvia Qingyu Cai\n<\/td>\nElectron Transport through InSe\/Metal Heterostructures\n<\/td><\/a><\/td><\/tr>
\n29\n<\/td>\nTsung-Mu Wu\n<\/td>\nFirst-principles calculation of interfacial characteristics between contact metal and two-dimensional materials\n<\/td><\/a><\/td><\/tr>
Ferroelectric Materials and Devices <\/font><\/strong><\/strong><\/td><\/tr>
\nNo.\n<\/td>\nName\n<\/td>\nTitle\n<\/td> <\/td><\/tr>
\n30\n<\/td>\nJie-Ni Dai\n<\/td>\nDesign Space Exploration for Interfacial-Layer-Free Negative-Capacitance FET\n<\/td><\/a><\/td><\/tr>
\n31\n<\/td>\nCheng-Yu Yu\n<\/td>\nComparative Analysis of Ferroelectric Properties and Reliability in MFM Capacitors with Varied HZO Layer Thicknesses\n<\/td><\/a><\/td><\/tr>
\n32\n<\/td>\nMing-Lun Tsai\n<\/td>Seed-layer Effects on the Ferroelectric Properties of Hf1-x<\/sub>Zrx<\/sub>O2<\/sub> Thin Films <\/td><\/a><\/td><\/tr>
\n33\n<\/td>\nYu-Tsung Liao\n<\/td>\nEngineering HZO by Flat Amorphous TiN Achieving Uniform c-axis Alignment, High Breakdown Field, and Endurance > 4E12\n<\/td><\/a><\/td><\/tr>
\n34\n<\/td>\nLi-Cheng Teng\n<\/td>\nDemonstration of BEOL-Compatible Ferroelectric 6.5 nm HZO Capacitor with High Endurance and Retention\n<\/td><\/a><\/td><\/tr>
III-V Semiconductor Devices and Novel Materials Applications <\/font><\/strong><\/strong><\/td><\/tr>
\nNo.\n<\/td>\nName\n<\/td>\nTitle\n<\/td> <\/td><\/tr>
\n35\n<\/td>\nMu-Yu Chen\n<\/td>\nImproving NDR and RF Characteristics of InGaAs MOSFETs through Ferroelectric Thickness Tuning for Enhanced Energy Efficiency\n<\/td><\/a><\/td><\/tr>
\n36\n<\/td>\nHowie Tseng\n<\/td>\nStudy of Low Noise and High Linearity AlGaN\/GaN HEMT with Ti\/Al\/Ti\/W Au-free Ohmic Contact\n<\/td><\/a><\/td><\/tr>
\n37\n<\/td>\nChun-Yi Hsia\n<\/td>\nReliability Study of Ir-Sputtered GaN Power Amplifier MMIC Under High Level RF Input Drive at Elevated Temperatues\n<\/td><\/a><\/td><\/tr>
\n38\n<\/td>\nJing-Yuan Tsai\n<\/td>Electric-Field Induced Structural Transition in HighPerformance High Entropy Oxide-Based Memristor<\/td><\/a><\/td><\/tr>
39<\/td>\nYu-Hao Wu\n<\/td>Visualization of Eu2+<\/sup>\/Eu3+<\/sup> coactivated BaAl2<\/sub>O4 <\/sub>phosphor using X-ray nanoprobe beamline at TPS 23A<\/td><\/a><\/td><\/tr>
40<\/td>Shuo-Ting Hsu<\/td>Distribution of TiC Nanoceramic Particles and Microstructural Properties of 7075 Aluminum Alloy<\/td><\/a><\/td><\/tr>
41<\/td>Kris K.H. Lin<\/td>Achieving Low Contact Resistance in MoS2<\/sub> nFET with van der Waals epi Au<\/td><\/a><\/td><\/tr><\/tbody><\/table><\/figure>\n","protected":false},"excerpt":{"rendered":"

Time: 12:50 – 13:30 and 15: 10 -15: 40 Transistor […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_acf_changed":false,"_uag_custom_page_level_css":"","footnotes":"","_links_to":"","_links_to_target":""},"class_list":["post-328","page","type-page","status-publish","hentry"],"acf":[],"uagb_featured_image_src":{"full":false,"thumbnail":false,"medium":false,"medium_large":false,"large":false,"1536x1536":false,"2048x2048":false},"uagb_author_info":{"display_name":"admin","author_link":"https:\/\/fsrc.nycu.edu.tw\/Conference\/author\/admin_2s2ztu52\/"},"uagb_comment_info":0,"uagb_excerpt":"Time: 12:50 – 13:30 and 15: 10 -15: 40 Transistor...","_links":{"self":[{"href":"https:\/\/fsrc.nycu.edu.tw\/Conference\/index.php\/wp-json\/wp\/v2\/pages\/328","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/fsrc.nycu.edu.tw\/Conference\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/fsrc.nycu.edu.tw\/Conference\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/fsrc.nycu.edu.tw\/Conference\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/fsrc.nycu.edu.tw\/Conference\/index.php\/wp-json\/wp\/v2\/comments?post=328"}],"version-history":[{"count":43,"href":"https:\/\/fsrc.nycu.edu.tw\/Conference\/index.php\/wp-json\/wp\/v2\/pages\/328\/revisions"}],"predecessor-version":[{"id":620,"href":"https:\/\/fsrc.nycu.edu.tw\/Conference\/index.php\/wp-json\/wp\/v2\/pages\/328\/revisions\/620"}],"wp:attachment":[{"href":"https:\/\/fsrc.nycu.edu.tw\/Conference\/index.php\/wp-json\/wp\/v2\/media?parent=328"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}